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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/13833

Title: Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers
Authors: Thi, Trinh Cham
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
Keywords: passivation
crystalline silicon solar cell
surface recombination velocity
Issue Date: 2016-01-22
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 55
Number: 2S
Start page: 02BF09-1
End page: 02BF09-6
DOI: 10.7567/JJAP.55.02BF09
Abstract: We investigate the role of hydrogen (H) in the improvement in the passivation quality of silicon nitride (SiN_x) prepared by catalytic chemical vapor deposition (Cat-CVD) and Cat-CVD SiN_x/phosphorus (P) Cat-doped layers on crystalline silicon (c-Si) by annealing. Both structures show promising passivation capabilities for c-Si with extremely low surface recombination velocity (SRV) on n-type c-Si. Defect termination by H is evaluated on the basis of defect density (N_d) determined by electron spin resonance (ESR) spectroscopy and interface state density (D_<it>) calculated by the Terman method. The two parameters are found to be drastically decreased by annealing after SiN_x deposition. The calculated average D_<it> at midgap (D_<it-average>) is 2.2×10^<11> eV^<-1>cm^<-2> for the SiN_x/P Cat-doped c-Si sample with a SRV of 2 cm/s, which is equivalent to 3.1×10^<11> eV^<-1>cm^<-2> for the SiN_x/c-Si sample with a SRV of 5 cm/s after annealing. The results indicate that H atoms play a critical role in the reduction in D_<it> for SiN_x/c-Si and SiN_x/P Cat-doped c-Si, resulting in a drastic reduction in SRV by annealing.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2016 The Japan Society of Applied Physics. Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, Japanese Journal of Applied Physics, 55(2S), 2016, 02BF09-1-02BF09-6. http://dx.doi.org/10.7567/JJAP.55.02BF09
URI: http://hdl.handle.net/10119/13833
Material Type: author
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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