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| Title: | Characterization of spin-orbit coupling in gated wire structures using Al_2O_3/In_0.75Ga_0.25As/In_0.75Al_0.25As inverted heterojunctions |
| Authors: | Ohori, Takahiro
Akabori, Masashi
Hidaka, Shiro
Yamada, Syoji |
| Keywords: | gated wire structures
inverted-modulation-doped heterojunctions
InGaAs/InAlAs
weak anti-localization
Al2O3/InGaAs interface |
| Issue Date: | 2016-09-30 |
| Publisher: | American Institute of Physics |
| Magazine name: | Journal of Applied Physics |
| Volume: | 120 |
| Number: | 14 |
| Start page: | 142123-1 |
| End page: | 142123-4 |
| DOI: | 10.1063/1.4963752 |
| Abstract: | Gated parallel wire structures obtained from inverted-modulation-doped heterojunctions made of high-In-content metamorphic InGaAs/InAlAs were investigated. The narrowest wire width was found to be ∼190 nm made using electron beam lithography and reactive ion etching. Magneto-transport was measured at low temperatures. Weak anti-localization and suppression with applied negative gate voltages were observed in low-mobility wide wires (1360 nm), which were considered for a two-dimensional system. The dependence on the gate voltage of spin-orbit coupling parameters was also obtained by fitting. The parameters decreased as the negative gate voltages increased. The trend might originate not from the electron system at the InGaAs/InAlAs interface but from the other electron system accumulated at the Al_2O_3/InGaAs interface, which can also contribute to conductivity. In high-mobility narrow wires (190 nm), which are close to a one-dimensional system, weak anti-localization peaks were still observed, indicating strong spin-orbit coupling. In addition, the critical widths of wires corresponding to zero conductance were estimated to be <100 nm. Therefore, our metamorphic modulation doped heterojunctions seem suitable for smaller spin-FETs. |
| Rights: | Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takahiro Ohori, Masashi Akabori, Shiro Hidaka and Syoji Yamada, Journal of Applied Physics, 120(14), 142123 (2016) and may be found at http://dx.doi.org/10.1063/1.4963752 |
| URI: | http://hdl.handle.net/10119/14067 |
| Material Type: | publisher |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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