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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/14706

タイトル: Application of crystalline silicon surface oxidation to silicon heterojunction solar cells
著者: Oikawa, Takafumi
Ohdaira, Keisuke
Higashimine, Koichi
Matsumura, Hideki
キーワード: Heterojunction solar cell
Ultra-thin SiOx layer
Epitaxial growth
発行日: 2015-07-07
出版者: Elsevier
誌名: Current Applied Physics
巻: 15
号: 10
開始ページ: 1168
終了ページ: 1172
DOI: 10.1016/j.cap.2015.07.004
抄録: We study the effect of ultra-thin oxide (SiO_x) layers inserted at the interface of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (V_<OC>). The SiO_x layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H_2O_2) and nitric acid (HNO_3). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultra-thin SiO_x layers. The formation of the SiO_x layers by H_2O_2 leads to better effective minority carrier lifetime (τ_<eff>) and V_<OC> than the case of using HNO_3. c-Si with the ultra-thin SiO_x layers formed by H_2O_2 dipping, prior to deposition of a-Si passivation layers, can have high implied V_<OC> of up to ~0.714 V.
Rights: Copyright (C)2015, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Takafumi Oikawa, Keisuke Ohdaira, Koichi Higashimine, Hideki Matsumura, Current Applied Physics, 15(10), 2015, 1168-1172, http://dx.doi.org/10.1016/j.cap.2015.07.004
URI: http://hdl.handle.net/10119/14706
資料タイプ: author
出現コレクション:z8-10-1. 雑誌掲載論文 (Journal Articles)


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