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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15343

Title: Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation
Authors: Yamaguchi, Seira
Masuda, Atsushi
Ohdaira, Keisuke
Keywords: Potential-induced degradation
n-type single-crystalline silicon photovoltaic module
n-type rear-emitter photovoltaic module
Surface recombination
Polarization effect
Issue Date: 2016-03-24
Publisher: Elsevier
Magazine name: Solar Energy Materials and Solar Cells
Volume: 151
Start page: 113
End page: 119
DOI: 10.1016/j.solmat.2016.03.003
Abstract: This study addresses the potential-induced degradation (PID) of n-type single-crystalline silicon (sc-Si) photovoltaic (PV) modules with a rear-side emitter. The n-type rear-emitter module configurations were fabricated using n-type bifacial sc-Si solar cells by module lamination with the p+ emitter side down. After the PID tests applying -1000 V, the modules show a rapid decrease in the open-circuit voltage (Voc), followed by relatively slower reductions in the fill factor and the short-circuit current density (Jsc). Their dark current density-voltage (J-V) data and external quantum efficiencies (EQEs) indicate that the drop in Voc is caused by an increase in the saturation current density due to the enhanced surface recombination of minority carriers. In contrast, the modules exhibit slight degradation under +1000 V, which is characterized by only slight decreases in Voc and Jsc. The EQE measurement reveals that these decreases are also attributed to the enhanced surface recombination of minority carriers. This behavior is almost identical tothat of the polarization effect in n-type interdigitated back contact PV modules reported in a previous study. By comparing the PID resistance with that of other types of modules, the n-type rear-emitter PV modules are relatively resistant to PID. This may become an advantage of the n-type rear-emitter PV modules.
Rights: Copyright (C)2016, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author’s version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structural formatting and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira, Solar Energy Materials and Solar Cells, 151, 2016, 113-119, http://dx.doi.org/10.1016/j.solmat.2016.03.003
URI: http://hdl.handle.net/10119/15343
Material Type: author
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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