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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16131
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| タイトル: | Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules |
| 著者: | Yamaguchi, Seira
Masuda, Atsushi
Ohdaira, Keisuke |
| 発行日: | 2016-10-21 |
| 出版者: | IOP Publishing |
| 誌名: | Applied Physics Express |
| 巻: | 9 |
| 号: | 11 |
| 開始ページ: | 112301-1 |
| 終了ページ: | 112301-4 |
| DOI: | 10.7567/APEX.9.112301 |
| 抄録: | This study addresses the progression of potential-induced degradation (PID) of photovoltaic modules using n-type single-crystalline silicon cells. In a PID test in which a voltage of −1000 V was applied to the cells, the modules started to degrade within 10 s, and degradation saturated within 120 s, suggesting that PID is caused by positive charge accumulation in the front passivation films. We propose that these positive charges originate from positively charged K centers formed by extracting electrons from K centers, which explains the rapid degradation and its saturation behavior. We obtained some simulated and experimental results supporting this hypothesis. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2016 The Japan Society of Applied Physics. Seira Yamaguchi, Atsushi Masuda and Keisuke Ohdaira, Applied Physics Express, 9(11), 2016, 112301. http://dx.doi.org/10.7567/APEX.9.112301 |
| URI: | http://hdl.handle.net/10119/16131 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| 3020.pdf | | 266Kb | Adobe PDF | 見る/開く |
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