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https://hdl.handle.net/10119/18204
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| Title: | Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules |
| Authors: | Yamaguchi, Seira
Aken, Bas B. Van
Stodolny, Maciej K.
Löffler, Jochen
Masuda, Atsushi
Ohdaira, Keisuke |
| Keywords: | Polarization-type potential-induced degradation
Photovoltaic module
n-type crystalline-silicon solar cell
Passivated emitter and rear totally diffused cell
Reliability
Acceleration test |
| Issue Date: | 2021-03-31 |
| Publisher: | Elsevier |
| Magazine name: | Solar Energy Materials and Solar Cells |
| Volume: | 226 |
| Start page: | 111074 |
| DOI: | 10.1016/J.SOLMAT.2021.111074 |
| Abstract: | System voltages can cause significant degradation in photovoltaic modules. Polarization-type potential-induced degradation (PID) is accompanied by decreases in the short-circuit current density and the open-circuit voltage. The system voltage causes a polarization and surface charge accumulation, increasing the interface recombination. The surface passivation and the emitter doping concentration and gradient are considered to have large impacts. However, a systematic study on these effects has not yet been performed. In this paper, the effects of the front surface structure of n-type passivated emitter and rear totally diffused cell modules were investigated by accelerated PID tests. Standard cells with thin silicon dioxide/80 nm silicon nitride (SiN_x) antireflection/passivation layers, refractive index (RI) of 2.0, exhibited typical polarization-type PID. Cells with increased RI = 2.4 for the bottom 20 nm SiN_x showed no degradation at all. This may be caused by reduced charge accumulation in the SiN_x layer near the interface due to the higher electrical conductivity of the Si-rich bottom layer. Secondly, cells with both a highly distorted interface, due to nitrogen insertion in the silicon surface, and an emitter with a high surface doping concentration have excellent resistance to PID. Cells with either the highly distorted interface or the higher emitter-surface doping concentration show no to minor improved resistance to PID. These findings improve the understanding of the effects of the front surface structure of cells on the polarization-type PID and may contribute to the implementation of these measures to reduce PID. |
| Rights: | Copyright (C)2021, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] |
| URI: | https://hdl.handle.net/10119/18204 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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