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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/19411
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| タイトル: | Delay of the potential-induced degradation of n-type crystalline silicon photovoltaic modules by the prior application of reverse bias |
| 著者: | Wu, Deqin
Huynh, Thi Cam Tu
Ohdaira, Keisuke |
| キーワード: | n-type front-emitter crystalline silicon solar cell
potential-induced degradation
Photovoltaic module |
| 発行日: | 2023-12-27 |
| 出版者: | IOP Publishing on behalf of the Japan Society of Applied Physics (JSAP) |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 63 |
| 号: | 2 |
| 開始ページ: | 02SP06 |
| DOI: | 10.35848/1347-4065/ad02a6 |
| 抄録: | We investigated the influence of the pre-application of reverse bias on the potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline Si (c-Si) photovoltaic modules. Applying a prior positive reverse bias to n-FE cells delays charge-accumulation-type PID (PID-1), decreases in short-circuit current density (Jsc) and open-circuit voltage (Voc). The prior positive bias accumulation may accumulate negative charges in the SiNx, which leads to an increase in a duration for the positive charge accumulation by the PID test applying a negative bias. We also found that sufficiently long prior positive bias application results in the delay of PID-2, a fill factor (FF) reduction by the incursion of Na ions into the depletion region of the p–n junction of n-FE cells. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (c) 2023 The Japan Society of Applied Physics. Deqin Wu, Huynh Thi Cam Tu, and Keisuke Ohdaira, Japanese Journal of Applied Physics, 63 (2), 2023, 02SP06. https://doi.org/10.35848/1347-4065/ad02a6 |
| URI: | http://hdl.handle.net/10119/19411 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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