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https://hdl.handle.net/10119/19952
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| Title: | Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering |
| Authors: | Nguyen, Duong Dai
Isoda, Takehiro
Deng, Yuchen
Suzuki, Toshi-kazu |
| Issue Date: | 2021-07-06 |
| Publisher: | AIP Publishing |
| Magazine name: | Journal of Applied Physics |
| Volume: | 130 |
| Number: | 1 |
| Start page: | 014503 |
| DOI: | 10.1063/5.0054045 |
| Abstract: | We report normally-off operations in partially-gate-recessed AlxTiyO(AlTiO)/AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect transistors (FETs), where aluminum titanium oxide AlTiO, an alloy of Al2O3 and TiO2, is employed as a gate insulator. Since AlTiO is useful for interface charge engineering owing to a trend that the AlTiO/AlGaN interface fixed charge is suppressed in comparison with Al2O3, we investigated combining the interface charge engineering with a partial gate recess method for AlTiO/AlGaN/GaN MIS-FETs. For AlTiO with a composition of x/(x+y)=0.73, a suppressed positive interface fixed charge at the AlTiO/recessed-AlGaN interface leads to a positive slope in the relation between the threshold voltage and the AlTiO insulator thickness. As a result, we successfully obtained normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN MIS-FETs with favorable performances, such as a threshold voltage of 1.7 V, an on-resistance of 9.5 Ωmm, an output current of 450 mA/mm, a low sub-threshold swing of 65 mV/decade, and a rather high electron mobility of 730 cm2/Vs. The results show that the interface charge engineering in combination with partial gate recess is effective for the GaN-based normally-off device technology. |
| Rights: | Copyright (c) 2021 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki; Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering, Journal of Applied Physics, 6 July 2021; 130 (1): 014503 and may be found at https://doi.org/10.1063/5.0054045. |
| URI: | https://hdl.handle.net/10119/19952 |
| Material Type: | publisher |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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| T-SUZUKI-N-0627-3r.pdf | | 2924Kb | Adobe PDF | View/Open |
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