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https://hdl.handle.net/10119/19954
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| Title: | Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals |
| Authors: | Uryu, Kazuya
Kiuchi, Shota
Sato, Taku
Suzuki, Toshi-kazu |
| Issue Date: | 2022-02-03 |
| Publisher: | AIP Publishing |
| Magazine name: | Applied Physics Letters |
| Volume: | 120 |
| Number: | 5 |
| Start page: | 052104 |
| DOI: | 10.1063/5.0080265 |
| Abstract: | We studied the mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures via formation and removal of Ta/Al/Ta Ohmic-metals. Multi-probe Hall device measurements show one order increase in the sheet electron concentration after Ohmicmetal formation compared with that before formation, indicating that high-density doping takes place in the AlGaN/GaN heterostructure under the Ohmic-metal. However, after Ohmic-metal removal, the increased sheet electron concentration returns to the value before formation. Moreover, we formed Ni/Au Schottky contacts on the AlGaN/GaN heterostructures before Ohmic-metal formation and after Ohmicmetal removal, and confirmed that the characteristics are almost the same. These results indicate that donors do not exist after Ohmic-metal removal, suggesting that, although high-density doping takes place, high-density donors are not formed under the Ohmic-metal. The highdensity doping without high-density donors could be attributed to polarization doping, playing a significant role in Ohmic contact formation. |
| Rights: | Copyright (c) 2022 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kazuya Uryu, Shota Kiuchi, Taku Sato, Toshi-kazu Suzuki; Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals, Applied Physics Letters, 3 February 2022; 120 (5): 052104 and may be found at https://doi.org/10.1063/5.0080265. |
| URI: | https://hdl.handle.net/10119/19954 |
| Material Type: | publisher |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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