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Please use this identifier to cite or link to this item: https://hdl.handle.net/10119/20613

Title: Weak frequency dispersion of C-V characteristics of AlGaN/GaN metal-insulator-semiconductor devices despite high interface trap density
Authors: Deng, Yuchen
Gelan, Jieensi
Uryu, Kazuya
Suzuki, Toshi-kazu
Issue Date: 2025-06-08
Publisher: Wiley-VCH GmbH
Magazine name: physica status solidi (a)
Start page: 2500266
DOI: 10.1002/pssa.202500266
Abstract: 'For AlGaN/GaN metal-insulator-semiconductor (MIS) devices, it is shown that there is a case where the frequency dispersion of the capacitance-voltage (C-V ) characteristics is very weak despite a rather high insulator-semiconductor interface trap density. We fabricated metal/Al2O3/AlGaN/GaN MIS devices, and carried out C-V characterization of them. Although they exhibit very weak C-V frequency dispersion for 100 Hz-1 MHz, we found that, based on the conductance method, the insulator-semiconductor interface trap densities are rather high ∼3 × 1013 cm−2eV−1. As a possible explanation, we consider a double-peak model, which underlines the possibility that a high interface trap density does not necessarily lead to strong C-V frequency dispersion. The model can explain the observed weak C-V frequency dispersion, implying that it is not appropriate to naively discuss the interface traps only from the apparent C-V frequency dispersion.
Rights: This is the peer reviewed version of the following article: Deng, Y., Gelan, J., Uryu, K. and Suzuki, T.-k. (2025), Weak Frequency Dispersion of C–V Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor Devices Despite High Interface Trap Density. Phys. Status Solidi A 2500266, which has been published in final form at https://doi.org/10.1002/pssa.202500266. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.
URI: https://hdl.handle.net/10119/20613
Material Type: author
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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