|
|
JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4970
|
| タイトル: | Silicon on insulator for symmetry-converted growth |
| 著者: | Fujikawa, Y.
Yamada-Takamura, Y.
Yoshikawa, G.
Ono, T.
Esashi, M.
Zhang, P. P.
Lagally, M. G.
Sakurai, T. |
| 発行日: | 2007-06-11 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 90 |
| 号: | 24 |
| 開始ページ: | 243107 |
| DOI: | 10.1063/1.2748099 |
| 抄録: | Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers. c 2007 American Institute of Physics. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally and T. Sakurai, Applied Physics Letters, 90(24), 243107- (2007) and may be found at http://link.aip.org/link/?APPLAB/90/243107/1 |
| URI: | http://hdl.handle.net/10119/4970 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| yytAPL2007.pdf | | 246Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
