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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/4970
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| Title: | Silicon on insulator for symmetry-converted growth |
| Authors: | Fujikawa, Y.
Yamada-Takamura, Y.
Yoshikawa, G.
Ono, T.
Esashi, M.
Zhang, P. P.
Lagally, M. G.
Sakurai, T. |
| Issue Date: | 2007-06-11 |
| Publisher: | American Institute of Physics |
| Magazine name: | Applied Physics Letters |
| Volume: | 90 |
| Number: | 24 |
| Start page: | 243107 |
| DOI: | 10.1063/1.2748099 |
| Abstract: | Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers. c 2007 American Institute of Physics. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally and T. Sakurai, Applied Physics Letters, 90(24), 243107- (2007) and may be found at http://link.aip.org/link/?APPLAB/90/243107/1 |
| URI: | http://hdl.handle.net/10119/4970 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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| yytAPL2007.pdf | | 246Kb | Adobe PDF | View/Open |
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