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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4970

Title: Silicon on insulator for symmetry-converted growth
Authors: Fujikawa, Y.
Yamada-Takamura, Y.
Yoshikawa, G.
Ono, T.
Esashi, M.
Zhang, P. P.
Lagally, M. G.
Sakurai, T.
Issue Date: 2007-06-11
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 90
Number: 24
Start page: 243107
DOI: 10.1063/1.2748099
Abstract: Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers. c 2007 American Institute of Physics.
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally and T. Sakurai, Applied Physics Letters, 90(24), 243107- (2007) and may be found at http://link.aip.org/link/?APPLAB/90/243107/1
URI: http://hdl.handle.net/10119/4970
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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