JAIST Repository >
School of Knowledge Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/5008

Title: A 6K-Gate GaAs Gate Array with a New Large-Noise-Margin SLCF Circuit
Authors: Terada, Toshiyuki
Ikawa, Yasuo
Kameyama, Atsushi
Kawakyu, Katsue
Sasaki, Tadahiro
Kitaura, Yoshiaki
Ishida, Kenji
Nishihori, Kazuya
Toyoda, Nobuyuki
Issue Date: 1987-10
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: IEEE Journal of Solid-State Circuits
Volume: 22
Number: 5
Start page: 755
End page: 761
Abstract: A 6K-gate GaAs gate array has been successfully designed and fabricated using a new large-noise-margin Schottky-diode level-shifter capacitor-coupled FET logic (SLCF) circuitry and a WN_x-gate self-aligned LDD structure GaAs MESFET process. Chip size was 8.0×8.0 mm^2. A basic cell can be programmed as an SLCF inverter, a two-input NOR, or a two-input NAND gate. The unloaded propagation delay time was 76 ps/gate at a 1.2-mW/gate power dissipation. The increases in delay time due to various loading capacitances were 10 ps/fan-in, 45 ps/fan-out, and 0.64 ps/fF. A 16-bit serial-to-parallel-to-serial (S/P/S) data-conversion circuit was constructed on the gate array as an application example. A maximum operation frequency of 852 MHz was achieved at a 952-mW power dissipation, including I/O buffers.
Rights: Copyright (C)1987 IEEE. Reprinted from IEEE Journal of Solid-State Circuits, 22(5), 1987, 755-761. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/5008
Material Type: publisher
Appears in Collections:a10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
B3756.pdf1261KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology