JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9000

Title: Advantage of plasma-less deposition: Cat-CVD fabrication of a-Si TFT with current drivability equivalent to poly-Si TFT
Authors: Matsumura, Hideki
Ohdaira, Keisuke
Nishizaki, Shogo
Keywords: 73.40.Lq
Issue Date: 2010-04
Publisher: Wiley
Magazine name: physica status solidi (c)
Volume: 7
Number: 3-4
Start page: 1132
End page: 1135
DOI: 10.1002/pssc.200982821
Abstract: This is to study on the advantage of plasma-less deposition in catalytic chemical vapour deposition (Cat-CVD), often called hot-wire CVD. The effects of plasma damage are particularly studied by the performance of amorphous-silicon thin film transistors (a-Si TFTs), since it is strongly affected by the property of an interface between a gate insulating film and an a-Si film. It is found that the plasma damage at the interface affects on off-current of TFT, and that the off-current of Cat-CVD a-Si TFT is much lower than that of a-Si TFT in which all films are prepared by the conventional plasma-enhanced CVD (PECVD). The off-current of Cat-CVD a-Si TFTs is likely to increase and approach to the same level as the off-current of PECVD a-Si TFT, when Cat-CVD a-Si is exposed to weak plasma. In addition, since the off-current is so low, when the ratio of the channel width (W) to the channel length (L) is adjusted, the on-current can be increased up to the same level as the on-current of poly-crystalline silicon (poly-Si) TFT with keeping the off-current on the same level as that of poly-Si one. That is, it is concluded that a-Si TFT with current drivability equivalent to poly-Si TFT can be produced by using plasma-less Cat-CVD method for preparing films used in TFTs.
Rights: Copyright (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article: Hideki Matsumura, Keisuke Ohdaira, Shogo Nishizaki, physica status solidi (c), 7(3-4), 2010, 1132-1135. http://dx.doi.org/10.1002/pssc.200982821
URI: http://hdl.handle.net/10119/9000
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
pss_matsumura_1st.pdf506KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology