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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9824

Title: Extremely Low Recombination Velocity on Crystalline Silicon Surfaces Realized by Low-Temperature Impurity Doping in Cat-CVD Technology
Authors: Hayakawa, Taro
Miyamoto, Motoharu
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
Keywords: Solar cells
Surface recombination velocity
Impurity doping
Issue Date: 2011
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 519
Number: 14
Start page: 4466
End page: 4468
DOI: 10.1016/j.tsf.2011.01.301
Abstract: To reduce surface recombination velocity (SRV) at the interface between amorphous Si (a-Si) and crystalline silicon (c-Si), we particularly investigated the treatment of c-Si surface prior to a-Si deposition using decomposed radicals of hydrogen (H_2) and phosphine (PH_3). The SRV can be reduced dramatically to 1.6 cm/s only for n-type c-Si, while no such reduction is observed in p-type c-Si. Secondary ion mass spectrometry (SIMS) and the Hall effect measurement actually reveal the existence of phosphorus (P) atoms in c-Si near the surface.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Taro Hayakawa, Motoharu Miyamoto, Koichi Koyama, Keisuke Ohdaira and Hideki Matsumura, Thin Solid Films , 519(14), 2011, 4466-4468, http://dx.doi.org/10.1016/j.tsf.2011.01.301
URI: http://hdl.handle.net/10119/9824
Material Type: author
Appears in Collections:b10-1. 雑誌掲載論文 (Journal Articles)

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