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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15798

Title: 低消費電力回路への応用に向けたグラフェントンネルトランジスタの急峻スイッチング特性の解析
Authors: 鈴木, 俊英
Authors(alternative): すずき, しゅんえい
Keywords: Graphene
Graphene nanoribbon (GNR)
Tunnel _eld effect transistor(TFET)
First principle simulation
Subthreshold Swing (SS)
ON/OFF ratio
Issue Date: Mar-2019
Description: Supervisor:水田 博
先端科学技術研究科
博士
Title(English): Analysis of steep switching characteristics in graphene tunnel field effect transistors for application to the low power circuit
Authors(English): Suzuki, Shunei
Language: jpn
URI: http://hdl.handle.net/10119/15798
Academic Degrees and number: 甲第1128号
Degree-granting date: 2019-03-22
Degree name: 博士(マテリアルサイエンス)
Degree-granting institutions: 北陸先端科学技術大学院大学
Appears in Collections:D-MS. 2018年度(H30) (Jun.2018 - Mar.2019)

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