JAIST Repository >
Theses >
Doctor of Philosophy(Materials Science) >
H30) (Jun.2018 - Mar.2019 >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15798

Title: 低消費電力回路への応用に向けたグラフェントンネルトランジスタの急峻スイッチング特性の解析
Authors: 鈴木, 俊英
Authors(alternative): すずき, しゅんえい
Keywords: Graphene
Graphene nanoribbon (GNR)
Tunnel _eld effect transistor(TFET)
First principle simulation
Subthreshold Swing (SS)
ON/OFF ratio
Issue Date: Mar-2019
Description: Supervisor:水田 博
Title(English): Analysis of steep switching characteristics in graphene tunnel field effect transistors for application to the low power circuit
Authors(English): Suzuki, Shunei
Language: jpn
URI: http://hdl.handle.net/10119/15798
Academic Degrees and number: 甲第1128号
Degree-granting date: 2019-03-22
Degree name: 博士(マテリアルサイエンス)
Degree-granting institutions: 北陸先端科学技術大学院大学
Appears in Collections:D-MS. 2018年度(H30) (Jun.2018 - Mar.2019)

Files in This Item:

File Description SizeFormat
abstract.pdf要旨719KbAdobe PDFView/Open
paper.pdf本文13185KbAdobe PDFView/Open
summary.pdf内容の要旨及び論文審査の結果の要旨1157KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology