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Items for Author "Deng, Yuchen"

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Date of IssueTitle Authors
6-Jul-2021 Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineeringNguyen, Duong Dai; Isoda, Takehiro; Deng, Yuchen; Suzuki, Toshi-kazu
5-Jul-2023 Electron mobility enhancement in n-GaN under Ohmic-metalUryu, Kazuya; Deng, Yuchen; Le, Son Phuong; Suzuki, Toshi-kazu
11-Aug-2023 Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structuresNguyen, Duong Dai; Deng, Yuchen; Suzuki, Toshi-kazu
28-Feb-2024 AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed chargeDeng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu
Jun-2024 金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御DENG, YUCHEN; でん, ゆうじん

 
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