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著者:  "Kubozono, Y"

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9 著者名表示.

発行日タイトル 著者
Mar-2002 Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu_(6-x)Sr_xC_<60>Ishii, K; Fujiwara, A; Suematsu, H; Kubozono, Y
Jun-2002 Structure and physical properties of Cs_(3+α)C_<60>(α = 0.0 - 1.0) under ambient and high pressuresFujiki, S; Kubozono, Y; Kobayashi, M; Kambe, T; Rikiishi, Y; Kashino, S; Ishii, K; Suematsu, H; Fujiwara, A
Mar-2003 Crystal Structure and Electronic Transport of Dy@C_<82>Kubozono, Y; Takabayashi, Y; Shibata, K; Kanbara, T; Fujiki, S; Kashino, S; Fujiwara, A; Emura, S
Sep-2003 Structural and electronic properties of Ce@C_<82>Shibata, K; Rikiishi, Y; Hosokawa, T; Haruyama, Y; Kubozono, Y; Kashino, S; Uruga, T; Fujiwara, A; Kitagawa, H; Takano, T; Iwasa, Y
Jan-2004 Scanning tunneling microscopy of Dy@C_<82> and Dy@C_<60> adsorbed on Si(111)-(7×7) surfacesFujiki, S; Kubozono, Y; Hosokawa, T; Kanbara, T; Fujiwara, A; Nonogaki, Y; Urisu, T
Apr-2004 Fabrication and Characteristics of C_<84> Fullerene Field-Effect TransistorShibata, K; Kubozono, Y; Kanbara, T; Hosokawa, T; Fujiwara, A; Ito, Y; Shinohara, H
Oct-2005 Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulatorsKubozono, Y; Nagano, T; Haruyama, Y; Kuwahara, E; Takayanagi, T; Ochi, K; Fujiwara, A
Apr-2006 Fabrication of field-effect transistor devices with fullerodendron by solution processKusai, H; Nagano, T; Imai, K; Kubozono, Y; Sako, Y; Takaguchi, Y; Fujiwara, A; Akima, N; Iwasa, Y; Hino, S
Jul-2006 Variation of output properties of perylene field-effect transistors by work function of source/drain electrodesOhta, T; Nagano, T; Ochi, K; Kubozono, Y; Shikoh, E; Fujiwara, A

 


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