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JAIST Repository >
著者: "Kudo, Masahiro"
5 著者名表示.
| 発行日 | タイトル |
著者 |
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| 2010 | Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases | Akabori, Masashi; Trinh, Thanh Quang; Kudo, Masahiro; Hardtdegen, Hilde; Schäpers, Thomas; Suzuki, Toshi-kazu |
| 7-Jul-2010 | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates | Takita, Hayato; Hashimoto, Norihiko; Nguyen, Cong Thanh; Kudo, Masahiro; Akabori, Masashi; Suzuki, Toshi-kazu |
| 24-Jul-2012 | Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 7-Aug-2014 | Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices | Le, Son Phuong; Nguyen, Tuan Quy; Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 14-Nov-2014 | Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
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