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Items for Author "Uryu, Kazuya"

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Date of IssueTitle Authors
10-Aug-2018 Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETsSato, Taku; Uryu, Kazuya; Okayasu, Junichi; Kimishima, Masayuki; Suzuki, Toshi-kazu
14-Jul-2021 Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devicesUryu, Kazuya; Kiuchi, Shota; Suzuki, Toshi-kazu
3-Feb-2022 Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metalsUryu, Kazuya; Kiuchi, Shota; Sato, Taku; Suzuki, Toshi-kazu
5-Jul-2023 Electron mobility enhancement in n-GaN under Ohmic-metalUryu, Kazuya; Deng, Yuchen; Le, Son Phuong; Suzuki, Toshi-kazu
28-Feb-2024 AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed chargeDeng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu

 
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