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JAIST Repository >
著者: "Uryu, Kazuya"
5 著者名表示.
| 発行日 | タイトル |
著者 |
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| 10-Aug-2018 | Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs | Sato, Taku; Uryu, Kazuya; Okayasu, Junichi; Kimishima, Masayuki; Suzuki, Toshi-kazu |
| 14-Jul-2021 | Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices | Uryu, Kazuya; Kiuchi, Shota; Suzuki, Toshi-kazu |
| 3-Feb-2022 | Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals | Uryu, Kazuya; Kiuchi, Shota; Sato, Taku; Suzuki, Toshi-kazu |
| 5-Jul-2023 | Electron mobility enhancement in n-GaN under Ohmic-metal | Uryu, Kazuya; Deng, Yuchen; Le, Son Phuong; Suzuki, Toshi-kazu |
| 28-Feb-2024 | AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge | Deng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu |
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