15 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 15-Nov-2000 | Influence of electronic states on precipitation of metallic As clusters in LT-GaAs | Otsuka, N.; Tasaki, Y.; Yamada, T.; Suda, A.; M. R. Melloch |
| 1-Jan-2001 | Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature | Fukushima, S.; Obata, T.; Otsuka, N. |
| 4-Apr-2002 | Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures | Shimogishi, F.; Mukai, K.; Fukushima, S.; Otsuka, N. |
| 10-Feb-2003 | Strong localization of carriers in δ-doped GaAs structures | Noh, J.P.; Shimogishi, F.; Otsuka, N. |
| 1-Sep-2003 | Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures | Rath, M. C.; Araya, T.; Kumazaki, S.; Yoshihara, K.; Otsuka, N. |
| 29-Jan-2004 | Percolation transition of the quasi-two-dimenasional hole system in δ-doped GaAs structures | Noh, J.P.; Shimogishi, F.; Idutsu, Y.; Otsuka, N. |
| 29-Jan-2004 | Percolation transition of the quasi-two-dimensional hole system in δ-doped GaAs structures | Noh, J.P.; Shimogishi, F.; Idutsu, Y.; Otsuka, N. |
| Apr-2007 | Existence of localized spins in pair-delta doped GaAs structures | Noh, J.P.; Idutsu, Y.; Otsuka, N. |
| 9-Apr-2007 | X-ray diffraction analysis of the structure of antisite arsenic point defects in low-temperature-grown GaAs layer | Fukushima , S.; Otsuka, N. |
| 4-May-2007 | Anomalous Hall effect of metallic Be/Si pair δ-doped GaAs structures | Noh, J.P.; Iwasaki, S.; Jung, D. W.; Touhidul Islam, A. Z. M.; Otsuka, N. |
| 19-Feb-2008 | Large anomalous Hall resistance of pair δ-doped GaAs structures grown by molecular-beam epitaxy | Jung, D. W.; Noh, J. P.; Touhidul Islam, A. Z. M.; Otsuka, N. |
| 11-Apr-2011 | Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low temperature-grown GaAs layers | Bae, K.W.; Mohamed, Mohd Ambri; Jung, D.W.; Otsuka, N. |
| 28-Dec-2011 | Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers | Mohamed, Mohd Ambri; Lam, Pham Tien; Bae, K. W.; Otsuka, N. |
| 26-Apr-2012 | Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers | Higashimine, Koichi; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki; Otsuka, N. |
| 4-Feb-2013 | Non-equilibrium critical point in Be-doped low-temperature-grown GaAs | Mohamed, Mohd Ambri; Lam, Pham Tien; Otsuka, N. |
