JAIST Repository >

Otsuka Nobuo

No.Bibliographical information
1 Non-equilibrium critical point in Be-doped low-temperature-grown GaAs / Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N., Journal of Applied Physics, 113(5), pp.053504-1-053504-7, 2013-02-04, American Institute of Physics
2 Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers / Higashimine, Koichi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Otsuka, N., Journal of Vacuum Science & Technology B, 30(3), pp.31208-1-31208-6, 2012-04-26, American Vacuum Society
3 Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers / Mohamed, Mohd Ambri, Lam, Pham Tien, Bae, K. W., Otsuka, N., Journal of Applied Physics, 110(12), pp.123716-1-123716-7, 2011-12-28, American Institute of Physics
4 Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low temperature-grown GaAs layers / Bae, K.W., Mohamed, Mohd Ambri, Jung, D.W., Otsuka, N., Journal of Applied Physics, 109(7), pp.73918-1-73918-8, 2011-04-11, American Institute of Physics
5 Large anomalous Hall resistance of pair δ-doped GaAs structures grown by molecular-beam epitaxy / Jung, D. W., Noh, J. P., Touhidul Islam, A. Z. M., Otsuka, N., Journal of Applied Physics, 103(4), pp.043703-1-043703-8, 2008-02-19, American Institute of Physics
6 Anomalous Hall effect of metallic Be/Si pair δ-doped GaAs structures / Noh, J.P., Iwasaki, S., Jung, D. W., Touhidul Islam, A. Z. M., Otsuka, N., Physical Review B, 75(19), pp.195307-1-195307-7, 2007-05-04, American Physical Society
7 X-ray diffraction analysis of the structure of antisite arsenic point defects in low-temperature-grown GaAs layer / Fukushima , S., Otsuka, N., Journal of Applied Physics, 101(7), pp.073513-1-073513-7, 2007-04-09, American Institute of Physics
8 Existence of localized spins in pair-delta doped GaAs structures / Noh, J.P., Idutsu, Y., Otsuka, N., Journal of Crystal Growth, 301-302, pp.662-665, 2007-04, Elsevier
9 Negative magnetoresistance of Be δ -doped GaAs structures / Idutsu, Y, Noh, J.P, Shimogishi, F, Otsuka, N, Physical Review B : Condensed Matter and Materials Physics, 73(11), pp.115306-1-115306-6, 2006-03, AMERICAN PHYSICAL SOCIETY
10 Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers / Araya, T, Kato, N, Otsuka, N, Journal of Applied Physics, 98(4), pp.043526-1-043526-6, 2005-08, AMERICAN INSTITUTE OF PHYSICS
11 Percolation transition of the quasi-two-dimenasional hole system in δ-doped GaAs structures / Noh, J.P., Shimogishi, F., Idutsu, Y., Otsuka, N., Physical Review B, 69(4), pp.045321-1-045321-6, 2004-01-29, American Physical Society
12 Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures / Rath, M. C., Araya, T., Kumazaki, S., Yoshihara, K., Otsuka, N., Journal of Applied Physics, 94(5), pp.3173-3180, 2003-09-01, American Institute of Physics
13 Strong localization of carriers in δ-doped GaAs structures / Noh, J.P., Shimogishi, F., Otsuka, N., Physical Review B, 67(7), pp.075309-1-075309-6, 2003-02-10, American Physical Society
14 Fablication of GaAs MISFET with nm-Thin Oxidized Layer Formed by UV and Ozone Process / Iiyama, Koichi, Kita, Yukihiro, Ohta, Yosuke, Nasuno, Masaaki, Takamiya, Saburo, Higashimine, Koichi, Ohtsuka, Nobuo, IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(11), pp.1856-1862, 2002-11, Institute of Electrical and Electronics Engineers (IEEE)
15 Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures / Shimogishi, F., Mukai, K., Fukushima, S., Otsuka, N., Physical Review B, 65(16), pp.165311-1-165311-5, 2002-04-04, American Physical Society
16 Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature / Fukushima, S., Obata, T., Otsuka, N., Journal of Applied Physics, 89(1), pp.380-385, 2001-01-01, American Institute of Physics
17 Influence of electronic states on precipitation of metallic As clusters in LT-GaAs / Otsuka, N., Tasaki, Y., Yamada, T., Suda, A., M. R. Melloch, Journal of Applied Physics, 88(10), pp.6016-6020, 2000-11-15, American Institute of Physics
18 Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature / Sano, H, Suda, A, Hatanaka, T, Mizutani, G, Otsuka, N, Journal of Applied Physics, 88(7), pp.3948-3953, 2000-10, AMERICAN INSTITUTE OF PHYSICS
19 Arsenic flux dependence of incorporation of excess arsenic in molecular beam epitaxy of GaAs at low temperature / Suda, A, Otsuka, N, Applied Physics Letters, 73(11), pp.1529-1531, 1998-09, AMERICAN INSTITUTE OF PHYSICS

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology