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JAIST Repository >
著者: "Koyama, Koichi"
11 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 26-Aug-2010 | Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers | Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 2011 | Extremely Low Recombination Velocity on Crystalline Silicon Surfaces Realized by Low-Temperature Impurity Doping in Cat-CVD Technology | Hayakawa, Taro; Miyamoto, Motoharu; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 6-Feb-2012 | Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon | Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 26-Apr-2012 | Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers | Higashimine, Koichi; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki; Otsuka, N. |
| 22-Jan-2014 | Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing | Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 28-Jul-2014 | Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN_x films by introducing phosphorous catalytic-doped layer | Trinh, Cham Thi; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 16-Sep-2014 | Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C | Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Trinh, Cham Thi; Koyama, Koichi; Ohdaira, Keisuke |
| 10-Jun-2015 | Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms | Tsuzaki, Shogo; Ohdaira, Keisuke; Oikawa, Takafumi; Koyama, Koichi; Matsumura, Hideki |
| 22-Jan-2016 | Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers | Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
| 17-Jul-2018 | High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiN_x layers and an ultrathin SiO_x film | Tu, Huynh Thi Cam; Koyama, Koichi; Nguyen, Cong Thanh; Ohdaira, Keisuke; Matsumura, Hideki |
| 21-May-2019 | Conversion of the conduction type of a catalytic-chemical-vapor-deposited p-type a-Si by PH_3 plasma ion implantation | Tu, Huynh-Thi-Cam; Koyama, Koichi; Yamaguchi, Noboru; Suzuki, Hideo; Ohdaira, Keisuke; Matsumura, Hideki |
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