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JAIST Repository >
一覧: タイトル
検索結果: 225-245 / 917.
発行日 | タイトル |
著者 |
May-2007 | Evidence for carrier-induced high-T_c ferromagnetism in Mn-doped GaN film | Yoshii, S.; Sonoda, S.; Yamamoto, T.; Kashiwagi, T.; Hagiwara, M.; Yamamoto, Y.; Akasaka, Y.; Kindo, K.; Hori, H. |
25-Apr-2006 | Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7x7 | Ansari, Zubaida A.; Tomitori, Masahiko; Arai, Toyoko |
Apr-2007 | Existence of localized spins in pair-delta doped GaAs structures | Noh, J.P.; Idutsu, Y.; Otsuka, N. |
21-Nov-2019 | Experimental and numerical study on transient elongational viscosity for PP/LDPE blends | Otsuki, Yasuhiko; Fujii, Yoko; Sasaki, Hiroko; Phulkerd, Panitha; Yamaguchi, Masayuki |
25-Aug-2009 | Explosive crystallization of amorphous silicon films by flash lamp annealing | Ohdaira, Keisuke; Fujiwara, Tomoko; Endo, Yohei; Nishizaki, Shogo; Matsumura, Hideki |
2007 | Extraction of novel sulfated polysaccharides from Aphanothece sacrum (Sur.) Okada, and its spectroscopic characterization | Okajima-Kaneko, Maiko; Ono, Masateru; Kabata, Kiyotaka; Kaneko, Tatsuo |
22-May-2014 | Extraordinary wavelength dispersion of birefringence in cellulose triacetate film with anisotropic nanopores | Nobukawa, Shogo; Shimada, Hikaru; Aoki, Yoshihiko; Miyagawa, Azusa; Doan, Vu Ahn; Yoshimura, Hiroshi; Tachikawa, Yutaka; Yamaguchi, Masayuki |
26-Aug-2010 | Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers | Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki |
Nov-2002 | Fablication of GaAs MISFET with nm-Thin Oxidized Layer Formed by UV and Ozone Process | Iiyama, Koichi; Kita, Yukihiro; Ohta, Yosuke; Nasuno, Masaaki; Takamiya, Saburo; Higashimine, Koichi; Ohtsuka, Nobuo |
Apr-2004 | Fabrication and Characteristics of C_<84> Fullerene Field-Effect Transistor | Shibata, K; Kubozono, Y; Kanbara, T; Hosokawa, T; Fujiwara, A; Ito, Y; Shinohara, H |
Jun-2003 | Fabrication and characterization of C_<60> thin-film transistors with high field effect mobility | Kobayashi, S; Takenobu, T; Mori, S; Fujiwara, A; Iwasa, Y |
22-Feb-2010 | Fabrication and Characterization of Carbon Nanotube Field-Effect Transistors using Ferromagnetic Electrodes with Different Coercivities | Mohamed, Mohd Ambri; Azam, Mohd Asyadi; Shikoh, Eiji; Fujiwara, Akihiko |
13-May-2016 | Fabrication and Characterization of Cross-linked Organic Thin Films with Nonlinear Mass Densities | Rashed, Md. A; Laokroekkiat, Salinthip; Hara, Mitsuo; Nagano, Shusaku; Nagao, Yuki |
30-Jun-2005 | Fabrication and characterization of field-effect transistor device with C_<2v> isomer of Pr@C_<82> | Nagano, Takayuki; Kuwahara, Eiji; Takayanagi, Toshio; Kubozono, Yoshihiro; Fujiwara, Akihiko |
21-Sep-2010 | Fabrication and Characterization of Planar Screen-Printed Ag/AgCl Reference Electrode for Disposable Sensor Strip | Idegami, Koutarou; Chikae, Miyuki; Nagatani, Naoki; Tamiya, Eiichi; Takamura, Yuzuru |
11-Jul-2009 | Fabrication of a submicron patterned electrode using an electrospun single fiber as a shadow-mask | Ishii, Yuya; Sakai, Heisuke; Murata, Hideyuki |
28-Mar-2011 | Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask | Ishii, Y; Sakai, H; Murata, H |
15-Nov-2004 | Fabrication of ambipolar field-effect transistor device with heterostructure of C_<60> and pentacene | Kuwahara, Eiji; Kubozono, Yoshihiro; Hosokawa, Tomoko; Nagano, Takayuki; Masunari, Kosuke; Fujiwara, Akihiko |
Oct-2005 | Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators | Kubozono, Y; Nagano, T; Haruyama, Y; Kuwahara, E; Takayanagi, T; Ochi, K; Fujiwara, A |
Apr-2006 | Fabrication of field-effect transistor devices with fullerodendron by solution process | Kusai, H; Nagano, T; Imai, K; Kubozono, Y; Sako, Y; Takaguchi, Y; Fujiwara, A; Akima, N; Iwasa, Y; Hino, S |
15-Nov-2019 | Fabrication of silicon heterojunction solar cells with a boron-doped a-Si:H layer formed by catalytic impurity doping | Akiyama, Katsuya; Ohdaira, Keisuke |
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