25 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 15-Aug-1995 | A statistical model of quantum dot arrays with Coulomb coupling | Suzuki, Toshi-kazu; Nomoto, Kazumasa; Ugajin, Ryuichi; Hase, Ichiro |
| 2004 | High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures | Ono, Hideki; Taniguchi, Satoshi; Suzuki, Toshi-kazu |
| 2005 | Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion | Ono, Hideki; Yanagita, Masashi; Taniguchi, Satoshi; Suzuki, Toshi-kazu |
| 1-Jul-2006 | Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities | ONO, Hideki; TANIGUCHI, Satoshi; SUZUKI, Toshi-kazu |
| 25-Jan-2008 | Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates | Jeong, Yonkil; Shindo, Masanori; Akabori, Masashi; Suzuki, Toshi-kazu |
| 2010 | Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases | Akabori, Masashi; Trinh, Thanh Quang; Kudo, Masahiro; Hardtdegen, Hilde; Schäpers, Thomas; Suzuki, Toshi-kazu |
| 7-Jul-2010 | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates | Takita, Hayato; Hashimoto, Norihiko; Nguyen, Cong Thanh; Kudo, Masahiro; Akabori, Masashi; Suzuki, Toshi-kazu |
| 5-Jun-2012 | Electron distribution and scattering in InAs films on low-k flexible substrates | Nguyen, Cong Thanh; Shih, Hong-An; Akabori, Masashi; Suzuki, Toshi-kazu |
| 24-Jul-2012 | Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 2-Oct-2012 | Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates | Suzuki, Toshi-kazu; Hayato Takita; Cong Thanh Nguyen; Iiyama, Koichi |
| 7-Aug-2014 | Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices | Le, Son Phuong; Nguyen, Tuan Quy; Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 14-Nov-2014 | Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 9-Nov-2015 | Low-frequency noise in InAs films bonded on low-k flexible substrates | Le, Son Phuong; Ui, Toshimasa; Suzuki, Toshi-kazu |
| 27-May-2016 | Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors | Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy; Shih, Hong-An; Suzuki, Toshi-kazu |
| 4-May-2017 | An InAs/high-k/low-k structure: Electron transport and interface analysis | Ui, Toshimasa; Mori, Ryousuke; Le, Son Phuong; Oshima, Yoshifumi; Suzuki, Toshi-kazu |
| 22-Jun-2018 | 狭ギャップ半導体における低次元鏡像電荷効果に基づく中赤外領域励起子制御 | 鈴木, 寿一; Suzuki, Toshi-kazu |
| 10-Aug-2018 | Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs | Sato, Taku; Uryu, Kazuya; Okayasu, Junichi; Kimishima, Masayuki; Suzuki, Toshi-kazu |
| 5-Mar-2020 | Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices | Nguyen, Duong Dai; Suzuki, Toshi-kazu |
| 3-May-2021 | Electron mobility anisotropy in InAs/GaAs(001) heterostructures | Le, Son Phuong; Suzuki, Toshi-kazu |
| 6-Jul-2021 | Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering | Nguyen, Duong Dai; Isoda, Takehiro; Deng, Yuchen; Suzuki, Toshi-kazu |
| 14-Jul-2021 | Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices | Uryu, Kazuya; Kiuchi, Shota; Suzuki, Toshi-kazu |
| 3-Feb-2022 | Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals | Uryu, Kazuya; Kiuchi, Shota; Sato, Taku; Suzuki, Toshi-kazu |
| 5-Jul-2023 | Electron mobility enhancement in n-GaN under Ohmic-metal | Uryu, Kazuya; Deng, Yuchen; Le, Son Phuong; Suzuki, Toshi-kazu |
| 11-Aug-2023 | Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures | Nguyen, Duong Dai; Deng, Yuchen; Suzuki, Toshi-kazu |
| 28-Feb-2024 | AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge | Deng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu |
