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HORITA Susumu ProfessorFaculty Profile

No.Bibliographical information
1 Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH) / Horita, Susumu, Pu, Di, Japanese Journal of Applied Physics, 63(01SP12), pp.1-9, 2023-12-20, IOP Publishing on behalf of the Japan Society of Applied Physics (JSAP)
2 セルロースナノペーパー上の結晶化シリコン薄膜による薄膜トランジスタの作製 / 堀田, 將, 科学研究費助成事業研究成果報告書, pp.1-6, 2019-05-16
3 Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas / Horita, Susumu, Jain, Puneet, Japanese Journal of Applied Physics, 57(3S1), pp.03DA02-1-03DA02-7, 2018-01-23, IOP Publishing
4 Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone / Horita, Susumu, Jain, Puneet, Japanese Journal of Applied Physics, 56(8), pp.088003-1-088003-3, 2017-07-03, IOP Publishing
5 Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layersby two-step irradiation method / Lien, Mai Thi Kieu, Horita, Susumu, Japanese Journal of Applied Physics, 55(3S1), pp.03CB02-1-03CB02-8, 2016-02-19, IOP Publishing
6 Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layers by the two-step irradiation method of pulsed laser annealing / Mai, Thi Kieu Lien, Horita, Susumu, Japanese Journal of Applied Physics, 54(3S), pp.03CA01-1-03CA01-8, 2015-02-18, IOP Publishing
7 Raman spectral analysis of Si films solid-phase-crystallized on glass substrates using pulse laser with crystallization-induction layers of yttria-stabilized zirconia / Mai, Thi Kieu Lien, Horita, Susumu, Japanese Journal of Applied Physics, 53(3S1), pp.03CB01-1-03CB01-7, 2014-02-06, IOP Publishing
8 Effect of the crystallization-induction layer of yttria-stabilized zirconia on the solid state crystallization of an amorphous Si film / Horita, Susumu, Akahori, Tetsuya, Japanese Journal of Applied Physics, 53(3), pp.030303-1-030303-4, 2014-01-31, IOP Publishing
9 種結晶層を用いた低温結晶化シリコン薄膜の粒径制御 / 堀田, 將, 科学研究費補助金研究成果報告書, pp.1-5, 2012-05-07
10 Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers / Horita, Susumu, Hana, Sukreen, Japanese Journal of Applied Physics, 49(10), pp.105801-1-105801-11, 2010-10-20, The Japan Society of Applied Physics
11 Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories with Intermediate Electrodes / Horita, Susumu, Trinh, Bui Nguyen Quoc, IEEE Transactions on Electron Devices, 56(12), pp.3090-3096, 2009-12, Institute of Electrical and Electronics Engineers (IEEE)
12 Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution / Horita, Susumu, Sukreen, Hana, Applied Physics Express, 2(4), pp.041201-1-041201-3, 2009-03-27, The Japan Society of Applied Physics
13 Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas / Horita, Susumu, Toriyabe, Koichi, Nishioka, Kensuke, Japanese Journal of Applied Physics, 48(3), pp.035502-1-035502-7, 2009-03-23, The Japan Society of Applied Physics
14 Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method / Horita, Susumu, Trinh, Bui Nguyen Quoc, IEEE Transactions on Electron Devices, 55(11), pp.3200-3207, 2008-11, Institute of Electrical and Electronics Engineers (IEEE)
15 Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam / Horita, Susumu, Kaki, Hirokazu, Nishioka, Kensuke, Journal of Applied Physics, 102(1), pp.103501-1-103501-10, 2007-07, AMERICAN INSTITUTE OF PHYSICS
16 Multireflection Effect on Formation of Periodic Surface Structure on an Si Film Melting-Crystallized by a Linearly Polarized Nd:YAG Pulse Laser Beam / Horita, Susumu, Kaki, Hirokazu, Nishioka, Kensuke, Japanese Journal of Applied Physics, 46(6A), pp.3527-3533, 2007, The Japan Society of Applied Physics
17 Periodic Grain-Boundary Formation in a Poly-Si Thin Film Crystallized by Linearly Polarized Nd: YAG Pulse Laser with an Oblique Incident Angle / Kaki, H, Horita, S, Journal of Applied Physics, 97(1), pp.014904-1-014904-9, 2005-01, AMERICAN INSTITUTE OF PHYSICS
18 Analysis on Operation of a F-FET Memory With an Intermediate Electrode / Khoa, Tran Dang, Horita, Susumu, IEEE Transactions on Electron Devices, 51(5), pp.820-823, 2004-05, Institute of Electrical and Electronics Engineers (IEEE)
19 Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator / Kaki, H, Ootani, T, Horita, S, Materials Research Society Symposium Proceedings, 808, pp.283-288, 2004, Warrendale, Pa.; Materials Research Society
20 Numerical analysis for lateral grain growth of poly-Si thin films controlled by laser-induced periodic thermal distribution / Kaki, H, Nakata, Y, Horita, S, Materials Research Society Symposium Proceedings, 715, pp.211-216, 2002, Warrendale, Pa.; Materials Research Society
21 Influence of the beam irradiation condition with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser / Nakata, Yasunori, Kaki, Hirokazu, Horita, Susumu, Materials Research Society Symposium - Proceedings, 715, pp.199-204, 2002, Warrendale, Pa.; Materials Research Society
22 Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass Substrate / Horita, S, Nakata, Y, Shimoyama, A, Applied Physics Letters, 78(15), pp.2250-2252, 2001-04, AMERICAN INSTITUTE OF PHYSICS
23 Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO_2)_<1-x>(Y_2O_3)_x Buffer Layer / Horita, Susumu, Aikawa, Mami, Naruse, Tetsuya, Japanese Journal of Applied Physics, 39, pp.4860-4868, 2000, The Japan Society of Applied Physics

 
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