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Matsumura Hideki

No．書籍情報
1 Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping / Ohdaira, Keisuke, Cham, Trinh Thi, Matsumura, Hideki, Japanese Journal of Applied Physics, 56(10), pp.102301-1-102301-4, 2017-09-11, IOP Publishing
2 Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 55(2S), pp.02BF09-1-02BF09-6, 2016-01-22, IOP Publishing
3 Application of crystalline silicon surface oxidation to silicon heterojunction solar cells / Oikawa, Takafumi, Ohdaira, Keisuke, Higashimine, Koichi, Matsumura, Hideki, Current Applied Physics, 15(10), pp.1168-1172, 2015-07-07, Elsevier
4 Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms / Tsuzaki, Shogo, Ohdaira, Keisuke, Oikawa, Takafumi, Koyama, Koichi, Matsumura, Hideki, Japanese Journal of Applied Physics, 54(7), pp.072301-1-072301-5, 2015-06-10, IOP Publishing
5 Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C / Matsumura, Hideki, Hayakawa, Taro, Ohta, Tatsunori, Nakashima, Yuki, Miyamoto, Motoharu, Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Journal of Applied Physics, 116(11), pp.114502-1-114502-10, 2014-09-16, American Institute of Physics
6 Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN_x films by introducing phosphorous catalytic-doped layer / Trinh, Cham Thi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Journal of Applied Physics, 116(4), pp.044510-1-044510-7, 2014-07-28, American Institute of Physics
7 Deposition of moisture barrier films by catalytic CVD using hexamethyldisilazane / Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(5S1), pp.05FM03-1-05FM03-4, 2014-04-02, IOP Publishing
8 Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Japanese Journal of Applied Physics, 53(2), pp.022301-1-022301-6, 2014-01-22, IOP Publishing
9 Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures / Ohdaira, Keisuke, Matsumura, Hideki, Thin Solid Films, 524, pp.161-165, 2012-10-23, Elsevier
10 Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization / Ohdaira, Keisuke, Sawada, Keisuke, Usami, Noritaka, Varlamov, Sergey, Matsumura, Hideki, Japanese Journal of Applied Physics, 51(10), pp.10NB15-1-10NB15-4, 2012-10-22, The Japan Society of Applied Physics
11 Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers / Higashimine, Koichi, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Otsuka, N., Journal of Vacuum Science & Technology B, 30(3), pp.31208-1-31208-6, 2012-04-26, American Vacuum Society
12 Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon / Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Solar Energy Materials and Solar Cells, 100, pp.169-173, 2012-02-06, Elsevier
13 Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization / Ohdaira, Keisuke, Ishii, Shohei, Tomura, Naohito, Matsumura, Hideki, Journal of Nanoscience and Nanotechnology, 12(1), pp.591-595, 2012-01-01, American Scientific Publishers
14 Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing / Ohdaira, Keisuke, Matsumura, Hideki, Journal of Crystal Growth, 362, pp.149-152, 2011-11-25, Elsevier
15 Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing / Ohdaira, Keisuke, Ishii, Shohei, Tomura, Naohito, Matsumura, Hideki, Japanese Journal of Applied Physics, 50, pp.04DP01-1-04DP01-3, 2011, The Japan Society of Applied Physics
16 Advantage of Plasma-Less Deposition in Cat-CVD to the Performance of Electronic Devices / Matsumura, Hideki, Hasegawa, Tomoaki, Nishizaki, Shogo, Ohdaira, Keisuke, Thin Solid Films, 519(14), pp.4568-4570, 2011, Elsevier
17 Flash-Lamp-Crystallized Polycrystalline Silicon Films with High Hydrogen Concentration Formed from Cat-CVD a-Si Films / Ohdaira, Keisuke, Tomura, Naohito, Ishii, Shohei, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4459-4461, 2011, Elsevier
18 Low Resistivity Metal Lines Formed by Functional Liquids and Successive Treatment of Catalytically Generated Hydrogen Atoms in Cat-CVD System / Kieu, Nguyen Thi Thanh, Ohdaira, Keisuke, Shimoda, Tatsuya, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4565-4567, 2011, Elsevier
19 Extremely Low Recombination Velocity on Crystalline Silicon Surfaces Realized by Low-Temperature Impurity Doping in Cat-CVD Technology / Hayakawa, Taro, Miyamoto, Motoharu, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Thin Solid Films, 519(14), pp.4466-4468, 2011, Elsevier
20 Synthesis, characterization, and OLED application of oligo(p-phenylene ethynylene)s with polyhedral oligomeric silsesquioxanes (POSS) as pendant groups / Ervithayasuporn, Vuthichai, Abe, Junichi, Wang, Xin, Matsushima, Toshinori, Murata, Hideyuki, Kawakami, Yusuke, Tetrahedron, 66(48), pp.9348-9355, 2010-10-10, Elsevier
21 Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers / Koyama, Koichi, Ohdaira, Keisuke, Matsumura, Hideki, Applied Physics Letters, 97(8), pp.082108-1-082108-3, 2010-08-26, AMERICAN INSTITUTE OF PHYSICS
22 Novel technique for formation of metal lines by functional liquid containing metal nanoparticles and reduction of their resistivity by hydrogen treatment / Nguyen, Thi Thanh Kieu, Ohdaira, Keisuke, Shimoda, Tatsuya, Matsumura, Hideki, Journal of Vacuum Science and Technology B, 28(4), pp.775-782, 2010-07-07, American Vacuum Society
23 Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films / Endo, Yohei, Fujiwara, Tomoko, Ohdaira, Keisuke, Nishizaki, Shogo, Nishioka, Kensuke, Matsumura, Hideki, Thin Solid Films, 518(17), pp.5003-5006, 2010-06-30, Elsevier
24 Variation of Crystallization Mechanisms in Flash-Lamp-Irradiated Amorphous Silicon Films / Ohdaira, Keisuke, Nishikawa, Takuya, Matsumura, Hideki, Journal of Crystal Growth, 312(19), pp.2834-2839, 2010-06-25, Elsevier
25 Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, Japanese Journal of Applied Physics, 49, pp.04DP04-1-04DP04-3, 2010-04-20, The Japan Society of Applied Physics
26 Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibrium flash lamp annealing / Ohdaira, Keisuke, Nishikawa, Takuya, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, physica status solidi (c), 7(3-4), pp.604-607, 2010-04, Wiley
27 Advantage of plasma-less deposition: Cat-CVD fabrication of a-Si TFT with current drivability equivalent to poly-Si TFT / Matsumura, Hideki, Ohdaira, Keisuke, Nishizaki, Shogo, physica status solidi (c), 7(3-4), pp.1132-1135, 2010-04, Wiley
28 Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures / Ohdaira, Keisuke, Nishikawa, Takuya, Shiba, Kazuhiro, Takemoto, Hiroyuki, Matsumura, Hideki, Thin Solid Films, 518(21), pp.6061-6065, 2010, Elsevier
29 Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes / Ohdaira, Keisuke, Takemoto, Hiroyuki, Nishikawa, Takuya, Matsumura, Hideki, Current Applied Physics, 10(3), pp.S402-S405, 2010, Elsevier
30 Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer / Matsushima, Toshinori, Murata, Hideyuki, Applied Physics Letters, 95(20), pp.203306-1-203306-3, 2009-11-20, American Institute of Physics
31 Explosive crystallization of amorphous silicon films by flash lamp annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki, Journal of Applied Physics, 106(4), pp.044907-1-044907-8, 2009-08-25, American Institute of Physics
32 Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films / Ohdaira, Keisuke, Takemoto, Hiroyuki, Shiba, Kazuhiro, Matsumura, Hideki, Applied Physics Express, 2, pp.061201-1-061201-3, 2009-06-12, The Japan Society of Applied Physics
33 Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing / Ohdaira, Keisuke, Shiba, Kazuhiro, Takemoto, Hiroyuki, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Jang, Young Rae, Matsumura, Hideki, Thin Solid Films, 517(12), pp.3472-3475, 2009-04-30, Elsevier
34 Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition / Ohdaira, K., Fujiwara, T., Endo, Y., Nishioka, K., Matsumura, H., Journal of Crystal Growth, 311(3), pp.769-772, 2009-01-15, Elsevier
35 Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki, Japanese Journal of Applied Physics, 47(11), pp.8239-8242, 2008-11-14, The Japan Society of Applied Physics
36 Thin film p-i-n poly-Si solar cells directly converted from p-i-n a-Si structures by a single shot of flash lamp / Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Shiba, Kazuhiro, Takemoto, Hiroyuki, Nishizaki, Shogo, Jang, Young Rae, Nishioka, Kensuke, Matsumura, Hideki, 33rd IEEE Photovolatic Specialists Conference, 2008. PVSC '08., pp.1-3, 2008-05, Institute of Electrical and Electronics Engineers (IEEE)
37 Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films / Ohdaira, Keisuke, Abe, Yuki, Fukuda, Makoto, Nishizaki, Shogo, Usami, Noritaka, Nakajima, Kazuo, Karasawa, Takeshi, Torikai, Tetsuya, Matsumura, Hideki, Thin Solid Films, 516(5), pp.600-603, 2008-01-15, Elsevier
38 Fullerene-Based Supramolecular Nanoclusters with Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] for Light Energy Conversion / Hasobe, Taku, Fukuzumi, Shunichi, Kamat, Prashant V., Murata, Hideyuki, Japanese Journal of Applied Physics, 47(2), pp.1223-1229, 2008, The Japan Society of Applied Physics
39 Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate / Ohdaira, Keisuke, Endo, Yohei, Fujiwara, Tomoko, Nishizaki, Shogo, Matsumura, Hideki, Japanese Journal of Applied Physics, 46(12), pp.7603-7606, 2007-12-06, The Japan Society of Applied Physics
40 High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition / Ohdaira, Keisuke, Nishizaki, Shogo, Endo, Yohei, Fujiwara, Tomoko, Usami, Noritaka, Nakajima, Kazuo, Matsumura, Hideki, Japanese Journal of Applied Physics, 46(11), pp.7198-7203, 2007-11-06, The Japan Society of Applied Physics
41 Rotational and vibrational state distribution of H_2 activated on a heated tungsten filament / Umemoto, Hironobu, Ansari, S. G., Matsumura, Hideki, Journal of Applied Physics, 99(4), pp.043510-1-043510-6, 2006-02-22, American Institute of Physics
42 Air-stable n-type carbon nanotube field-effect transistors with Si_3N_4 passivation films fabricated by catalytic chemical vapor deposition / Kaminishi, Daisuke, Ozaki, Hirokazu, Ohno, Yasuhide, Maehashi, Kenzo, Inoue, Koichi, Matsumoto, Kazuhiko, Seri, Yasuhiro, Masuda, Atsushi, Matsumura, Hideki, Applied Physics Letters, 86(11), pp.113115-1-113115-3, 2005-03-11, American Institute of Physics
43 Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing / KAWAMOTO, Naoya, MATSUO, Naoto, MASUDA, Atsushi, KITAMON, Yoshitaka, MATSUMURA, Hideki, HARADA, Yasunori, MIYOSHI, Tadaki, HAMADA, Hiroki, IEICE TRANSACTIONS on Electronics, E88-C(2), pp.241-246, 2005-02-01, 電子情報通信学会
44 Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH_4/H_2 system / Umemoto, Hironobu, Ohara, Kentaro, Morita, Daisuke, Nozaki, Yoshitaka, Masuda, Atsushi, Matsumura, Hideki, Journal of Applied Physics, 91(3), pp.1650-1656, 2002-02-01, American Institute of Physics
45 Identification of Si and SiH in catalytic chemical vapor deposition of SiH_4 by laser induced fluorescence spectroscopy / Nozaki, Yoshitaka, Kongo, Koichi, Miyazaki, Toshihiko, Kitazoe, Makiko, Horii, Katsuhiko, Umemoto, Hironobu, Masuda, Atsushi, Matsumura, Hideki, Journal of Applied Physics, 88(9), pp.5437-5443, 2000-11-01, American Institute of Physics
46 Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures / Sato, Hidekazu, Izumi, Akira, Matsumura, Hideki, Applied Physics Letters, 77(17), pp.2752-2754, 2000-10-23, American Institute of Physics
47 Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition / Niikura, Chisato, Masuda, Atsushi, Matsumura, Hideki, Journal of Applied Physics, 86(2), pp.985-990, 1999-07-15, American Institute of Physics
48 A metal/insulator tunnel transistor with 16 nm channel length / Sasajima, Ryouta, Fujimaru, Kouji, Matsumura, Hideki, Applied Physics Letters, 74(21), pp.3215-3217, 1999-05-24, American Institute of Physics
49 Nanoscale metal transistor control of Fowler-Nordheim tunneling currents through 16 nm insulating channel / Fujimaru, Kouji, Sasajima, Ryouta, Matsumura, Hideki, Journal of Applied Physics, 85(9), pp.6912-6916, 1999-05-01, American Institute of Physics
50 Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten / Heya, Akira, Masuda, Atsushi, Matsumura, Hideki, Applied Physics Letters, 74(15), pp.2143-2145, 1999-04-12, American Institute of Physics

 
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